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| TSB772 Low Vce(sat) PNP Transistor TO-126 Pin assignment: TO-126 1. Emitter 2. Collector 3. Base BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.5V(typ.) @Ic / Ib = - 2A / - 0.1A Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB772CK Packing Bulk Pack Package TO-126 Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse TO-126 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 50V - 50V -6 -3 - 7 (note 1) 1.0 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = - 50uA, IE = 0 IC = - 1mA, IB = 0 IE = - 50uA, IC = 0 VCB = - 40V, IE = 0 VEB = - 4V, IC = 0 IC / IB = - 2.0A / - 0.2A VCE = - 2V, IC = - 1A VCE = - 5V, IC = - 100mA, f = 100MHz VCB = - 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min - 50 - 50 -6 ---160 -- Typ ------ 0.3 -80 55 Max ----1 -1 - 0.5 350 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width <=380uS, duty cycle <=2% TSB772 1-1 2003/12 rev. B Electrical Characteristics Curve TSB772 2-2 2003/12 rev. B TO-126 Mechanical Drawing A I B C DIM A B C D E F G H I TO-126 DIMENSION MILLIMETERS INCHES MIN MAX 8.00 (typ) 4.20 (typ) 10.58 11.00 2.00 (typ) 12.00(typ) 2.50(typ) 0.74 0.78 0.8 (typ) 2.56 3.00 0.38 0.50 1.1 (typ) MIN MAX 0.315(typ) 0.165 (typ) 0.417 0.433 0.079 (typ) 0.472(typ) 0.098 (typ) 0.029 0.031 0.031(typ) 0.101 0.118 0.015 0.020 0.043 (typ) H D 1mm E G F J K J K TSB772 3-3 2003/12 rev. B |
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